Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T11:36:46.210Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of Si-Implanted (211) Versus (100) GaAs

Published online by Cambridge University Press:  25 February 2011

J. Epp ,
J. G. Dillard ,
A. Siochi ,
R. Zallen ,
E. D. Cole ,
S. Sen ,
A. Vaseashta  and
L. C. Burton
J. Epp
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
J. G. Dillard
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
A. Siochi
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
R. Zallen
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
E. D. Cole
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
S. Sen
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
A. Vaseashta
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
L. C. Burton
Affiliation:
Virginia Polytechnic Institute & State University, Blacksburg, VA 24061, USA
Get access

Abstract

Transport, Raman and XPS measurements were made on SI-implanted (1.7×1013cm−2, 50keV) and rapid-thermal annealed (100) and (211) GaAs substrates In an effort to distinguish differences between the two orientations. With these techniques, no significant differences were found. The implant-damage depth was about 1200Å for both orientations, with slightly higher near-surface damage (and lower mobility) apparent for (211). No unusual features in the (211) carrier concentration profile, as was previously reported, were evident.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 677
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Banerjee, I., Chye, P. W., and Gregory, P. E., IEEE Elect. Dev. Lett. 9, 10 (1988).10.1109/55.20397Google Scholar
2. Ryssel, H. et al., Ion Implantation, Wiley, p. 193 (1986).Google Scholar
3. Holtz, , et al., Phys. Rev. B 37, 4610 (1988).Google Scholar