Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-05-01T10:34:08.241Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of Recrystallised Polysilicon on SiO2 Produced by Dual Electron Beam Processing

Published online by Cambridge University Press:  15 February 2011

J.R. Davis ,
R.A. Mcmahon  and
H. Ahmed
J.R. Davis
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
R.A. Mcmahon
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
H. Ahmed
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
Get access

Abstract

This paper describes the production of large areas of precisely oriented, defect-free, single crystal silicon films on SiO2 by dual electron beam heating of deposited polysilicon using lateral epitaxy. Defects which occur in the film far from the seeding window are characterised, and the dependence of the area of the defect-free region on the processing conditions is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 563
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Leamy, H.J. in Laser and Electron Beam Interactions with Solids, Appleton, B.R. and Celler, G.K. eds. (Elsevier North Holland, New York, 1982), 459.Google Scholar
2.Lam, H.W., Pinizzotto, R.F. and Tasch, A.F., J. Electrochem Soc. 128, 1981 (1981).Google Scholar
3.McMahon, R.A., Davis, J.R. and Ahmed, H. in Laser and Electron Beam Interactions with Solids, Appleton, B.R. and Celler, G.K. eds (Elsevier North Holland, New York, 1982) 783.Google Scholar
4.Davis, J.R., McMahon, R.A. and Ahmed, H., Electronics Lett., 18, 163 (1982).Google Scholar
5.Tsaur, B-Y, Fan, J.C., Geis, M.W., Silversmith, D.J. and Mountain, R.W., Appl. Phys. Lett. 39, 561 (1981).Google Scholar
6.Schiller, S., Panzer, S. and Klabes, R., Thin Solid Films, 73, 221 (1980).Google Scholar