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Characteristics of Large-Area Plasma Enhanced Chemical Vapor Deposited TEOS Oxide with Various Short-Time Plasma Treatments

Published online by Cambridge University Press:  17 March 2011

Ting-Kuo Chang ,
Ching-Wei Lin ,
Chang-Ho Tseng ,
Huang-Chung Cheng ,
Yuan-Ching Peng  and
Wen-Tung Wang
Ting-Kuo Chang
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
Ching-Wei Lin
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
Chang-Ho Tseng
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
Huang-Chung Cheng
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
Yuan-Ching Peng
Affiliation:
Electronics Research & Service Organization, Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan, R.O.C.
Wen-Tung Wang
Affiliation:
Electronics Research & Service Organization, Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan, R.O.C.
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Abstract

In this work, high quality silicon dioxide (SiO2) films were prepared by large-area plasmaenhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O2, N2O, and NH3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N2O, and NH3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH3 plasma treatment exhibited the highest enhancement efficiency. O2- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Qbd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH3-plasma, samples with N2O plasma treatment showed superior stress endurance. Consequently, N2O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.3.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Rao, P. R. S., Remashan, K., Suryaprasad, K. R., Bhat, K. N. and Chari, K. S., Solid-StateElectron., 39,1808 (1996).Google Scholar
2. Ikeda, M., Nagayoshi, H., Onozawa, Y., Saitoh, T. and Kamisako, K., Sol. Energy Mater. & Sol. Cells, 48, 109 (1997).Google Scholar
3. Kao, C. H., Lai, C. S., and Lee, C. L., IEEE Trans. Electron Devices 45, 1927 (1998).Google Scholar
4. Bhat, N., Wang, A. W., and Saraswat, K. C., IEEE Trans. Electron Devices 46, 63 (1999).Google Scholar
5. Lin, C. W., Yang, M. Z., Yeh, C. C., Cheng, L. J., Huang, T. Y., Cheng, H. C., Lin, H. C., Chao, T. S., and Chang, C. Y., IEDM, (1999).Google Scholar
6. Ma, Z. J., Liu, Z. H., Crick, J. T., Huang, H. J., Cheng, Y. C., Hu, C., and Ko, P. K., IEEE Trans. Electron Devices 41, 1364 (1994).Google Scholar
7. Machida, K., Shimoyama, N., Takahashi, J., Arai, E. and Yabumoto, N., Proc. 10th Int. IEEE VLSI Multilevel Interconnection Conf., 103 (1993)..Google Scholar
8. Chen, Y. C., Yang, M. Z., Tung, I.C., Chen, M. P., Feng, M. S., Cheng, H. C., and Chang, C. Y., Jpn. J. Appl. Phys., 38, 4226 (1999).Google Scholar
9. Apte, P. P., and Saraswat, K. C., IEEE Trans. Electron Devices 41, 1595 (1994).Google Scholar
10. Bhat, N., Cao, M., and Saraswat, K. C., IEEE Trans. Electron Devices 44, 1102 (1997).Google Scholar