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Characteristics of deep traps in freestanding GaN

Published online by Cambridge University Press:  21 March 2011

Z-Q. Fang ,
D.C. Look ,
P. Visconti ,
C. Lu ,
D. Wang ,
H. Morkoç ,
S.S. Park  and
K.Y. Lee
Z-Q. Fang
Affiliation:
Semiconductor Research Center, Wright State University, Dayton, OH 45435
D.C. Look
Affiliation:
Semiconductor Research Center, Wright State University, Dayton, OH 45435
P. Visconti
Affiliation:
Electrical Engineering and Physics Department, Virginia Commonwealth University, P. O. Box 843072, Richmond, VA 23284-3072
C. Lu
Affiliation:
Electrical Engineering and Physics Department, Virginia Commonwealth University, P. O. Box 843072, Richmond, VA 23284-3072
D. Wang
Affiliation:
Electrical Engineering and Physics Department, Virginia Commonwealth University, P. O. Box 843072, Richmond, VA 23284-3072
H. Morkoç
Affiliation:
Electrical Engineering and Physics Department, Virginia Commonwealth University, P. O. Box 843072, Richmond, VA 23284-3072
S.S. Park
Affiliation:
Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, Korea 440-600
K.Y. Lee
Affiliation:
Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, Korea 440-600
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Abstract

Deep traps in a 300-m m-thick freestanding GaN sample were characterized by deep level transient spectroscopy (DLTS), using Schottky barrier diodes (SBDs) fabricated on the Ga polarity surface. Most of the SBDs show nearly ideal current-voltage characteristics, with both forward and reverse currents controlled by the thermionic emission mechanism. Five common traps, which include A1 (1.0 eV), A (0.66 eV), B (0.59 eV), C (0.35 eV), and D (0.25 eV), can be consistently observed in all SBDs. Two of them, A1 and C, are related to surface damage. Surprisingly, some new traps can be found in the DLTS spectra of some SBDs if higher reverse biases are used in the measurements. However, they cannot be fitted by DLTS simulations, and are likely associated with parasitic capacitance somewhere in the cryostat.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.55.1
Copyright
Copyright © Materials Research Society 2002

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