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Changing the Structural State of Amorphous Silicon by Ion Irradiation

Published online by Cambridge University Press:  25 February 2011

S. Roorda ,
W.C. Sinke ,
J.M. Poate ,
D.C. Jacobson ,
S. Dierker ,
B.S. Dennis ,
D.J. Eaglesham  and
F. Spaepen
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407,1089 SJ Amsterdam, The Netherlands.
W.C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407,1089 SJ Amsterdam, The Netherlands.
J.M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
D.C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
S. Dierker
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
B.S. Dennis
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
D.J. Eaglesham
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
F. Spaepen
Affiliation:
Harvard University, Cambridge, MA 02138, USA
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Abstract

Ion beams of keV and MeV energies have been used to bombard amorphous Si (a-Si), which had previously been annealed (‘relaxed’). Analysis by Raman spectroscopy and differential scanning calorimetry shows that when 1 out of every 20 Si atoms is displaced by a nuclear collision, the a-Si returns to its unrelaxed state and cannot be distinguished from as implanted a-Si. Moreover, the kinetics of the heat release on annealing of similarly bombarded crystalline Si (c-Si) are qualitatively identical to those of structural relaxation in a-Si. This implies that the population of ion beam induced defects in a-Si is very similar to that in c-Si. It also shows that defect annihilation is an important ingredient in the mechanism of structural relaxation of a-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 709
Copyright
Copyright © Materials Research Society 1990

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References

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