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Challenges of Ultra Low-k Dielectric Measurement and Plasma Damage Assessment

Published online by Cambridge University Press:  01 February 2011

Thomas Abell ,
Jeffrey Lee  and
Mansour Moinpour
Thomas Abell
Affiliation:
thomas.j.abell@intel.com, Intel Corp., Technology and Manufacturing Group, 2200 Mission College Blvd. SC1-05, Santa Clara, CA, 95052-8119, United States, (408)765-2345
Jeffrey Lee
Affiliation:
jeffery.fab7.lee@intel.com, Intel at IMEC, Affiliate Researcher, 75 Kapeldreef, Leuven, N/A, N/A, Belgium
Mansour Moinpour
Affiliation:
mansour.moinpour@intel.com, Intel Corp., Fab Materials Group, 2200 Mission College Blvd, Santa Clara, CA, 95052-8119, United States
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Abstract

The implementation of porous low-k and ultra-low k dielectrics to reduce RC delay in integrated circuit interconnect wiring has been fraught with numerous challenges. The obvious challenges of materials design and preservation of the desired electrical and mechanical properties upon subsequent processing have been significant. The vulnerability of these films to damage from fast ion and radiation damage will be discussed in the context of post-deposition processing (including low-k cure and plasma processing damage). This paper attempts to review the challenges associated with destructive and non-destructive measurement of low k dielectric films with respect to underlying physical principles of the metrology. Metrology techniques, assumed to be non-destructive based on experience with dense silicon dioxide, will be discussed with regards to newer and more fragile low-k dielectric films.

Keywords

dielectric propertieschemical compositionradiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F04-02
Copyright
Copyright © Materials Research Society 2006

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