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Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process

Published online by Cambridge University Press:  27 January 2014

Tetsuro Hemmi ,
Koji Nakayama ,
Katsunori Asano ,
Tetsuya Miyazawa  and
Hidekazu Tsuchida
Tetsuro Hemmi
Affiliation:
Power Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo 661-0974, Japan
Koji Nakayama
Affiliation:
Power Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo 661-0974, Japan
Katsunori Asano
Affiliation:
Power Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo 661-0974, Japan
Tetsuya Miyazawa
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 Japan
Hidekazu Tsuchida
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 Japan
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Abstract

The forward voltage degradation in 4H-SiC PiN diodes with a simplified process and that in 4H-SiC pin diodes with additional processes are investigated. Photoluminescence images were also observed to identify the cause of forward voltage degradation. The forward voltage degradations of 4H-SiC PiN diodes with additional processes were larger than those with a simplified process. Observing photoluminescence images of diodes after a current stress test showed that less than 25% of Shockley-type stacking faults in 4H-SiC PiN diodes with a simplified process are caused by half-loop dislocations, which are generated not only in the additional processes but also in the whole device fabrication process. With additional processes, those rates are over 65%, which may be reduced by eliminating half-loop dislocations due to the optimization of the process condition and sequence.

Keywords

dislocationsluminescenceelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 121 - 126
Copyright
Copyright © Materials Research Society 2014 

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References

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