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Cation Interdiffusion in GaInP/GaAs Single Quantum Wells

Published online by Cambridge University Press:  10 February 2011

Joseph Micallef ,
Andrea Brincat  and
Wai-Chee Shiu
Joseph Micallef
Affiliation:
Department of Microelectronics, University of Malta, Msida MSD 06, Malta
Andrea Brincat
Affiliation:
Department of Microelectronics, University of Malta, Msida MSD 06, Malta
Wai-Chee Shiu
Affiliation:
Department of Mathematics, Hong Kong Baptist University, Waterloo Road, Hong Kong
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Abstract

The effects of cation interdiffusion in Ga0.51In0.49P/GaAs single quantum wells are investigated using an error function distribution to model the compositional profile after interdiffusion. Two interdiffusion conditions are considered: cation only interdiffusion. and dominant cation interdiffusion. For both conditions the fundamental absorption edge exhibits a red shift with interdiffusion, with a large strain build up taking place in the early stages of interdiffusion. In the case of cation only interdiffusion, an abrupt carrier confinement profile is maintained even after significant interdiffusion, with a well width equal to that of the as-grown quantum well. When the interdiffusion takes place on two sublattices. but with the cation interdiffusion dominant, the red shift saturates and then decreases. The model results are consistent with reported experimental results. The effects of the interdiffusion-induced strain on the carrier confinement profile can be of interest for device applications in this material system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 441
Copyright
Copyright © Materials Research Society 1998

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