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Carrier Transport Through Grain Boundaries in Hydrogenated Microcrystalline Silicon

Published online by Cambridge University Press:  28 February 2011

S. Grebner ,
F. Wang  and
R. Schwarz
S. Grebner
Affiliation:
Technical Universityof Munich, Physics Department E16, James-Franck-Str., W-8046 Garching, FRG.
F. Wang
Affiliation:
Technical Universityof Munich, Physics Department E16, James-Franck-Str., W-8046 Garching, FRG.
R. Schwarz
Affiliation:
Technical Universityof Munich, Physics Department E16, James-Franck-Str., W-8046 Garching, FRG.
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Abstract

To analyse the influence of the grain boundaries (gb) on the transport of carriers in hydrogenated microcrystalline silicon (μC-Si:H) the ambipolar diffusion length (LLMB) was measured by SSPG. In addition, the films were characterised by photo-conductivity, dark conductivity activation energy, Urbach energy (determined by CPM), hydrogen effusion, Raman spectroscopy, X-ray scattering and optical transmission.

The sample series was prepared by PECVD of SiH4 diluted with increasing H2 content. Taking the structural information by Raman spectra and X-ray into account, we explain our optical and activation energy measurements within a three-phase-model (amorphous phase, crystalline phase, gb) and a Fermi level pinning in μc-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 513
Copyright
Copyright © Materials Research Society 1993

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References

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