Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-16T20:17:57.688Z Has data issue: false hasContentIssue false
  • English
  • Français

Carrier Transport in Silicon Nanocrystallite-Based Multilayer Electroluminescent Devices

Published online by Cambridge University Press:  15 February 2011

T. A. Burr  and
K. D. Kolenbrander
T. A. Burr
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
K. D. Kolenbrander
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
Get access

Abstract

The electrical and optical properties of light emitting devices employing silicon nanocrystallites as the active material have been studied. Thin films of silicon nanocrystallites were deposited using a pulsed laser ablation supersonic expansion technique. In order to explore their potential for optoelectronic applications, these films have been incorporated into multilayer light emitting devices, using polymer carrier transport layers to enhance their efficiency. Device performance has been found to be weakly temperature dependent, but strongly dependent on the electrical transport properties of the material and the carrier injection mechanisms at the nanocrystal/electrode interface. A systematic study of simple electrode/nanocrystallite/electrode heterostructures has demonstrated that the electrode material and polarity of the applied bias control whether the devices operate in the interface limited or carrier transport limited regimes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 271
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Amorphous Silicon Technology - 1992, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A., and Schiff, E. (Mater. Res. Soc. Proc. 258, Pittsburgh, PA, 1992).Google Scholar
2. Zheng, B., Michel, J., Ren, F.Y.G., Kimerling, L.C., Jacobson, D.C., and Poate, J.M., Appl. Phys. Lett., 64, 2842 (1994).Google Scholar
3. Canham, L.T., Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
4. Littau, K.A., Szajowski, P.J., Muller, A.J., Kortan, A.R. and Brus, L.E., J. Phys. Chem., 97, 1227 (1993).Google Scholar
5. See, for example: Surface/Interface and Stress Effects in Electronic Material Nanostructures, edited by Prokes, S.M., Wang, K.L., Cammarata, R.C., and Christou, A. (Mater. Res. Soc. Proc. 405, Pittsburgh, PA, 1996).Google Scholar
6. Chiu, L.A., Seraphin, A.A., and Kolenbrander, K.D., J. Electron. Mater., 23, 347 (1994).Google Scholar
7. Seraphin, A.A. and Kolenbrander, K.D. in Surface/Interface and Stress Effects in Electronic Material Nanostructures, edited by Prokes, S.M., Wang, K.L., Cammarata, R.C., and Christou, A. (Mater. Res. Soc. Proc. 405, Pittsburgh, PA, 1996).Google Scholar
8. Seraphin, A.A., Aranda, F.J., Werwa, E., Rao, D.V.G.L.N., and Kolenbrander, K.D. in Microcrystalline and Nanocrvstalline Semiconductors, edited by Brus, L., Collins, R.W., Hirose, M., Koch, F., and Tsai, C.C., (Mater Res. Soc. Proc. 358, Pittsburgh, PA, 1992) pp. 205–210.Google Scholar
9. Werwa, E., Seraphin, A.A., Chiu, L.A., Zhou, Chuxin, and Kolenbrander, K.D., Appl. Phys. Lett., 64, 1821 (1994).Google Scholar
10. Ben-Chorin, M., Muller, F., and Koch, F., Phys. Rev. B, 49, 2981 (1994).Google Scholar
11. Dabbousi, B.O., Bawendi, M.G., Onitsuka, O., and Rubner, M.F., Appl. Phys. Lett., 66, 1316 (1995).Google Scholar
12. Parker, I. D., J. Appl. Phys., 75, 1656 (1994).Google Scholar
13. Burr, T.A., Seraphin, A.A., and Kolenbrander, K.D. in International Symposium on Advanced Luminescent Materials, edited by Lockwood, D.J. and Fauchet, P.M. (Proc. of the Electro-chemical Society, 188th meeting), in press.Google Scholar
14. Sze, S. M., Physics of Semiconductor Devices., (New York, NY: John Wiley & Sons, 1981).Google Scholar
15. Ben-Chorin, M., Möller, F., and Koch, F., J. Appl. Phys., 77, 4482 (1995).Google Scholar