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Carrier Transport and Velocity Overshoot in Strained Si On Sige Heterostructures

Published online by Cambridge University Press:  10 February 2011

David K. Ferry ,
Gabriele Formicone  and
Dragica Vasileska
David K. Ferry
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706
Gabriele Formicone
Affiliation:
Motorola SPS, 2100 E.Elliot Road, Tempe, AZ 85284
Dragica Vasileska
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706
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Abstract

We examine the velocity overshoot effect in strained Six on Six-Ge1-x heterostructures. We also investigate the performance of surface-channel strained-Si MOSFETs for devices with gate lengths representative of the state-of-the-art technology. The Ensemble Monte Carlo method, self-consistently coupled with the 2D Poisson equation solver, is used in the investigation of the device performance. Our simulations suggest that, in short-channel devices, velocity overshoot is very important. In fact, when velocity overshoot occurs, it greatly affects the carrier dynamics and the current enhancement factor of both surface-channel strained-Si and conventional Si MOSFETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 31
Copyright
Copyright © Materials Research Society 1998

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