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Carrier recombination in InAs/GaAs Quantum Dot and GaInNAs/GaAs Quantum Well LEDs emitting near 1300 nm.

Published online by Cambridge University Press:  11 February 2011

A J Bennett ,
L Lofgren ,
P N Stavrinou ,
C Roberts ,
R Murray ,
G Parry  and
J S Roberts
A J Bennett
Affiliation:
Center for Electronic Materials and Devices, Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ
L Lofgren
Affiliation:
Center for Electronic Materials and Devices, Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ
P N Stavrinou
Affiliation:
Center for Electronic Materials and Devices, Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ
C Roberts
Affiliation:
Center for Electronic Materials and Devices, Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ
R Murray
Affiliation:
Center for Electronic Materials and Devices, Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ
G Parry
Affiliation:
Center for Electronic Materials and Devices, Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ
J S Roberts
Affiliation:
EPSRC III-V Semiconductor Central Facility, Dept. of Electronic Engineering, Mappin Street, Sheffield, S1 3JD
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Abstract

We have studied the emission from LEDs based on GaInNAs Quantum Wells (QWs) and InAs Quantum Dots (QDs) as a function of temperature and current. It is found that the carrier loss in GaInNAs QWs is dominated by non-radiative monomolecular and Auger processes resulting in an external quantum efficiency of only 0.08 % at 10 °C and 1000 A cm-2. In contrast, the InAs QDs have a higher external quantum efficiency, peaking at 0.8 % at 10 °C and 5 A cm-2, but this value rapidly decreases as the excited states of the QDs are filled and Auger-like processes become dominant. These results highlight the issues that must be addressed if these materials are to find commercial application: namely, the areal density of QDs must be increased and the material quality of the GaInNAs QWs must be improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M6.3
Copyright
Copyright © Materials Research Society 2003

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References

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