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CaP/Si Heteroepitaxial Layers with Reduced Defect Density

Published online by Cambridge University Press:  28 February 2011

A.E. Blakeslee ,
M.M. Al—jassim ,
J.M. Olson ,
K.M. Jones  and
S.M. Vernon
A.E. Blakeslee
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
M.M. Al—jassim
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
J.M. Olson
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
K.M. Jones
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
S.M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
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Abstract

It is shown that GaP layers grown upon Si at a single temperature of 900ºC can have a crystalline quality superior to that exhibited by previous two—step and one—step growth methods. The layers are characterized by a planar network of misfit dislocations confined to the interface plane an a reduced density of threading dislocations (low 106 cm-2; previously >108). Very few threading defects were observed in areas devoid of amorphous oxide contamination, as shown by HREM examination of cross—sectional samples. A low growth rate during nucleation enhances crystalline perfection, since it decreases the tendency toward three—dimensional islanding.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 313
Copyright
Copyright © Materials Research Society 1988

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References

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