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Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon?

Published online by Cambridge University Press:  25 February 2011

P.M. Fauchet ,
E. Ettedgui ,
A. Raisanen ,
L.J. Brillson ,
F. Seiferth ,
S.K. Kurinec ,
Y. Gao ,
C. Peng  and
L. Tsybeskov
P.M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
E. Ettedgui
Affiliation:
Department of Physics and Astronomy
A. Raisanen
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
L.J. Brillson
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
F. Seiferth
Affiliation:
Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester NY 14623
S.K. Kurinec
Affiliation:
Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester NY 14623
Y. Gao
Affiliation:
Department of Physics and Astronomy
C. Peng
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
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Abstract

Using a careful analysis of the properties of light-emitting porous silicon (LEpSi), we conclude that a version of the “smart” quantum confinement model which was first proposed by F. Koch et al [Mat. Res. Soc. Symp. Proc. 283, 197 (1993)] and allows for the existence of surface states and dangling bonds, is compatible with experimental results. Among the new results we present in support of this model, the most striking ones concern the strong infrared photoluminescence that dominates the room temperature cw spectrum after vacuum annealing above 600 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 271
Copyright
Copyright © Materials Research Society 1993

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References

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