Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-01T22:06:40.605Z Has data issue: false hasContentIssue false
  • English
  • Français

Calculations of SiH3 Diffusion and Growth Processes on a-Si:H Surfaces

Published online by Cambridge University Press:  01 February 2011

P Vigneron ,
P W Peacock ,
K Xiong  and
J Robertson
P Vigneron
Affiliation:
Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK
P W Peacock
Affiliation:
Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK
K Xiong
Affiliation:
Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK
J Robertson
Affiliation:
Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK
Get access

Abstract

Surface diffusion of a growth species is needed to give the observed smooth surface of hydrogenated amorphous silicon (a-Si:H). But what diffuses, the weakly bound SiH3 radical on the hydrogenated surface, or the bound SiH3 at a growth site. Diffusion is complicated by the change in the surface termination of a-Si:H as temperature rises. We use total energy pseudopotential calculations on a variety of periodic Si:H surface configurations to show that it is the weakly bound SiH3 that diffuses. We provide an overall energy scheme of the bound states and transport levels of SiH3 on a-Si:H surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A9.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gallagher, A, J App Phys 63 2406 (1988)Google Scholar
2. Matsuda, A, Tanaka, K, J Non-Cryst Solids 97 1367 (1987)Google Scholar
3. Robertson, J, J App Phys 87 2608 (2000)Google Scholar
4. Doughty, D A, Doyle, J R, Lin, G H, Gallagher, A, J App Phys 67 6220 (1990)Google Scholar
5. Smets, A H M, Kessels, W M M, Sanden, M C M van de, App Phys Lett 82 865 (2003)Google Scholar
6. Kessels, W M M, Smets, A H M, Marra, D C, Aydil, E S, Schram, D C, Sanden, M C M van de, Thin Solid Films 383 154 (2001)Google Scholar
7. Gupta, A, Bray, K R, Parsons, G N, J Vac Sci Technol, to be published (2003)Google Scholar
8. Dewarrat, R, Robertson, J, App Phys Lett 82 883 (2003)Google Scholar
9. Northrup, J E, Phys Rev B 44 1419 (1991)Google Scholar
10. Payne, M C, et al, Rev Mod Phys 64 1045 (1992)Google Scholar
11. Barkema, G T, Mousseau, N, Phys Rev B 62 4985 (2000)Google Scholar
12. Ramalingham, S, Sriraman, S, Aydil, E S, Maroudas, D, App Phys Lett 78 2685 (2001)Google Scholar
13. Bray, K R, Parsons, G N, Phys Rev B 65 035311 (2001)Google Scholar
14. Bray, K, Gupta, A, Parsons, G N, App Phys Lett 80 2356 (2002)Google Scholar
15. Ganguly, G, Matsuda, A, Phys Rev B 47 3661 (1993)Google Scholar