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Calculation of Gallium-Arsenic-Metal Phase Diagrams

Published online by Cambridge University Press:  25 February 2011

James D. Scofield ,
J. E. Davison  and
S. R. Smith
James D. Scofield
Affiliation:
Wright Research and Development Center, Aero Propulsion and Power Laboratory, WRDC/POOC-2, Wright-Patterson Air Force Base, OH 45433-6533
J. E. Davison
Affiliation:
University of Dayton, Research Institute, Dayton, OH 45469-0178
S. R. Smith
Affiliation:
University of Dayton, Research Institute, Dayton, OH 45469-0178
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Abstract

Contact metallizations for space-based GaAs solar cells must survive at high temperatures for several minutes. Which metallizations will survive can be predicted by properly calculated phase diagrams instead of performing hundreds of reactions. A method for calculating the ternary temperature constitution phase diagrams Is briefly explained and the phase diagrams are calculated for two Ga-As-X alloy systems. The free energy functions of the liquid and solid phases are approximated by the regular solution theory. The phase diagrams of the three binary alloy systems which form the boundaries of the ternary alloy system are utilized to calculate the binary regular solution parameters. The free energy functions for the ternary liquid and solid phases are expressed In terms of the binary regular solution parameters. The temperature and composition of the liquidus and solidus boundaries for the ternary alloy systems are calculated from these free energy functions. Calculated results are presented for the Ga-As-Ag and the Ga-As-Ge systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 225
Copyright
Copyright © Materials Research Society 1991

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References

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