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C Implantation for Suppression of Dislocation Formation

Published online by Cambridge University Press:  28 February 2011

J. R. Liefting ,
J. S. Custer  and
F. W. Saris
J. R. Liefting
Affiliation:
Technical University of Twente, PO Box 217,7500 AE Enschede, The Netherlands FOM Institute for Atomic and Molecular Physics, Rruislaan 407,1098 SJ Amsterdam, The Netherlands
J. S. Custer
Affiliation:
FOM Institute for Atomic and Molecular Physics, Rruislaan 407,1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM Institute for Atomic and Molecular Physics, Rruislaan 407,1098 SJ Amsterdam, The Netherlands
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Abstract

This paper will show that annealing of Si implanted with moderate doses of 725 keV B results in the formation of secondary defects, the so-called category I dislocations. Surprisingly, 12C, with roughly the same mass as 11B, behaves in a very different way. Carbon implant damage does not result in dislocation formation even for damage levels > 100 times higher than that required for B implants. C is also able to avoid dislocation formation of co-implanted B ions. The C-dose needed to avoid dislocation formation for the B implant increases nonlinearly with B-dose. Special C-related secondary defects remain after annealing if the C-dose is higher than 4×1015 /cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 179
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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