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Buried Metal Deposition on Gallium Arsenide by Laser-Induced Thermochemical Reaction

Published online by Cambridge University Press:  26 February 2011

Jun Tokuda ,
Mikio Takai ,
Kenji Gamo  and
Susumu Namba
Jun Tokuda
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, JAPAN
Mikio Takai
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, JAPAN
Kenji Gamo
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, JAPAN
Susumu Namba
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, JAPAN
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Abstract

Tin oxide deposition was performed by focused argon ion laser irradiation in a tin tetrachloride gas atmosphere. Etching of gallium arsenide and tin oxide deposition were observed in a single scan of a laser beam under specific conditions. The center of the irradiated area was etched and then covered with deposit. Density ratio of 0/Sn obtained from the deposit by AES measurements was about 1.4 - 1.6. Additional hydrogen gas in ambient SnCl4 gas reduced both tin oxide deposition and gallium arsenide etching. Deposition, at first, occurred at the outer side of the irradiated area and gallium arsenide etching occurred at the center of it. The amount of deposit depends on beam dwell time. Additional oxygen in ambient SnCl4 gas improved deposited film quality: the deposited film with additional oxygen proved to be tin dioxide, which is an conductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 261
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Jasinski, J.M., Meyerson, B.S., and Nguyen, T.N., Appl. Phys. Lett. 61,431 (1987).Google Scholar
2 Nishizawa, J., Kurabayashi, T., and Hoshina, J., J. E1ectrochem. Soc. 134, 502 (1987).Google Scholar
3 Tsao, J.Y., Ehrlich, D.J., Silversmith, D.J., and Mountain, R.W., IEEE Electorn Dev. Lett. EDL-3, 164 (1982).Google Scholar
4 McWilliams, B.M., Herman, I.P., Mitlitsky, F., Hyde, R.A., and Wood, L.L., Appl. Phys. Lett. 43, 946 (1983).Google Scholar
5 Arikado, T., Sekine, M., Okano, H., and Horiike, Y., Mater. Res. Soc. Symp. Proc. 29, 167 (1984).Google Scholar
6 Baum, T.H., Marinero, E.E., and Jones, CR., Appl. Phys. Lett. 49, 1213 (1986).Google Scholar
7 Higashi, G.S., and Fleming, C.G., Appl. Phys. Lett. 48, 1051 (1986).Google Scholar
8 Ehrlich, D.J., Osgood, R.M. Jr., and Deutsch, T.F., Appl. Phys. Lett. 38, 946 (1981).Google Scholar
9 Ehrlich, D.J., Osgood, R.M. Jr., and Deutsch, T.F., Appl. Phys. Lett. 39, 957 (1981).Google Scholar
10 Yokoyama, H., Uesugi, F., Kishida, S., and Washio, K., Appl. Phys. A 37, 25 (1985).Google Scholar
11 Ishizu, A., Inoue, Y., Nishimura, T., Akasaka, Y., and Miki, H., Jpn. J. Appl. Phys. 25, 1830 (1986).Google Scholar
12 Takai, M., Tokuda, J., Nakai, H., Gamo, K., and Namba, S., Jpn. J. Appl. Phys. 22, L753 (1983).Google Scholar
13 Takai, M., Tsuchimoto, J., Nakai, H., Gamo, K., and Namba, S., Jpn. J. Appl. Phys. 23, L852 (1984).Google Scholar
14 Tokuda, J., Takai, M., Gamo, K., and Namba, S., Proc. on Dry Process Symposium (E 1 ectrochem. Soc, in press); J. Tokuda, M. Takai, K. Gamo, and S. Namba, 172nd Electrochemical Society Meeting, Honolulu, October, 1987, Abstract No.750.Google Scholar
15 Tokuda, J., Takai, M., Nakai, H., Gamo, K., and Namba, S., J. Opt. Soc. Am. B. 4, 267 (1987).Google Scholar
16 Takai, M., Nakai, H., Tsuchimoto, J., Gamo, K., and Namba, S., Jpn. J. Appl. Phys. 24, L705 (1985).Google Scholar