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Buffer Layers for Ferroelectric-Based Infra-Red Detectors on Si Grown by a Novel CVD Method

Published online by Cambridge University Press:  15 February 2011

Gregory T. Stauf ,
Peter C. VanBuskirk ,
Peter S. Kirlin  and
Walter P. Kosar
Gregory T. Stauf
Affiliation:
Advanced Technology Materials, Danbury, CT., Steven Nutt, Brown University, Providence, RI
Peter C. VanBuskirk
Affiliation:
Advanced Technology Materials, Danbury, CT., Steven Nutt, Brown University, Providence, RI
Peter S. Kirlin
Affiliation:
Advanced Technology Materials, Danbury, CT., Steven Nutt, Brown University, Providence, RI
Walter P. Kosar
Affiliation:
Advanced Technology Materials, Danbury, CT., Steven Nutt, Brown University, Providence, RI
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Abstract

Ferroelectrics such as PbTiO3 and BaSrTiO3 are promising candidates for pyroelectric infrared detector materials. Integration of ferroelectric thin films on Si will permit fabrication of low-cost infrared detector arrays, but a buffer layer will be required to reduce interactions with the substrate. For this reason we have investigated MOCVD of MgAl2O4 and yttria-stabilized zirconia (YSZ) buffer layers on both Si and MgO. A single source molecule, magnesium dialuminum isopropoxide (Mg[Al(OCH(CH3)2)4]2), was used for deposition of the MgAl2O4, the first time to our knowledge that well characterized multi-metal oxide films have been deposited by CVD from a single-source compound. Both EDAX and RBS showed film stoichiometries consistent with the elemental ratio in the source. A novel liquid solution-based flash vaporization technique was used to transport the organometallic sources into the reactor, providing both excellent reproducibility and ease of stoichiometry control and deposition rate. Highly oriented [100] MgAl2O4 was grown on MgO, and [100] YSZ was grown on MgO and Si. Degree of preferred orientation of the YSZ was found to be dependent on oxygen partial pressure, both for the MgO and Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 291
Copyright
Copyright © Materials Research Society 1994

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