Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-16T15:41:46.135Z Has data issue: false hasContentIssue false
  • English
  • Français

The “Buffer” Layer in the Cvd Growth of β-SiC on (001) Silicon

Published online by Cambridge University Press:  25 February 2011

T. T. Cheng ,
P. Pirouz  and
J. A. Powell
T. T. Cheng
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
J. A. Powell
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Get access

Abstract

The concept of a “buffer” layer in the epitaxial growth of compound semiconductors on (001) silicon substrate is discussed on the basis of homogeneous and heterogeneous surface nucleation. Experimental results on the nucleation of β-SiC on (001) Si by Chemical Vapor Deposition (CVD) are presented and they are discussed in terms of the model for the growth of the buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 229
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Nishino, S., Powell, J. A., and Will, H. A., Appl. Phys. Lett. 42, 490 (1983).Google Scholar
[2] Akiyama, M., Kawarada, Y., and Kaminishi, K., J. Crystal Growth 68, 21 (1984).CrossRefGoogle Scholar
[3] Olson, J. M., Al-Jassim, M. M., Kibbler, A., and Jones, K. M., J. Crystal Growth 77, 515 (1986).CrossRefGoogle Scholar
[4] Pirouz, P., Ernst, F., and Cheng, T. T., Mat. Res. Soc. Symp. Proc. 116, 59 (1988).Google Scholar
[5] Ernst, F. and Pirouz, P., J. Appl. Phys. 64, 4526 (1988).CrossRefGoogle Scholar
[6] Pirouz, P., in “Polycrystalline Semiconductors: Properties of Grain Boundaries and Interfaces”, Ed. Moller, H.-J., Strunk, H. P., and Werner, J. H.. Springer Proceedings in Physics 35, 200 (1989). Springer-Verlag, Berlin.CrossRefGoogle Scholar