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Broad Band Optical Power Limiting in Vanadium Doped Cd0.55Mn0 45Te Crystals

Published online by Cambridge University Press:  03 September 2012

S. B. Trivedi ,
R. J. Chen ,
K. Grasza ,
S. W. Kutcher ,
G. V. J. Nathan ,
W. H. Steier ,
David Bacher ,
S. Guha  and
Patrick Hood
S. B. Trivedi
Affiliation:
Brimrose Corporation of America, 7720 Bel Air Road, Baltimore, MD 21236
R. J. Chen
Affiliation:
Brimrose Corporation of America, 7720 Bel Air Road, Baltimore, MD 21236
K. Grasza
Affiliation:
Brimrose Corporation of America, 7720 Bel Air Road, Baltimore, MD 21236
S. W. Kutcher
Affiliation:
Brimrose Corporation of America, 7720 Bel Air Road, Baltimore, MD 21236
G. V. J. Nathan
Affiliation:
Brimrose Corporation of America, 7720 Bel Air Road, Baltimore, MD 21236
W. H. Steier
Affiliation:
Dept. of Electrical Engineering, Center for Photonics Technology, University of Southern California, Los Angeles, CA 90089
David Bacher
Affiliation:
Dept. of Electrical Engineering, Center for Photonics Technology, University of Southern California, Los Angeles, CA 90089
S. Guha
Affiliation:
Materials Directorate, WL/MLPJ, Wright Laboratory, 3005 P. Street, Suite 1, Wright Patterson AFB, OH 45433
Patrick Hood
Affiliation:
Materials Directorate, WL/MLPJ, Wright Laboratory, 3005 P. Street, Suite 1, Wright Patterson AFB, OH 45433
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Abstract

A variety of approaches have been used for optical limiting in the past [1–6].A relatively new approach, an electro-optic power limiter (EOPL) has a simple and compact design, wavelength agile sensitivity, the ability to respond to coherent as well as incoherent radiation, low threshold and a large field of view (up to 15°). EOPL devices allow the transmission of low intensity background radiation while simultaneously blocking the damaging high intensity beam. We have demonstrated EOPL in the past using the II-VI semiconductors CdTe:In [7,8], CdTe:V [9] and ZnTe [10]. In this paper, we are reporting on EOPL using a new ternary II-VI semiconductor Cdl-xMnxTe:V. Cd0.55Mn0.45Te is capable of limiting optical radiation from visible (0.630.tm) to near infrared (1.5pm) wavelengths, which covers the wavelength ranges of both CdTe and ZnTe combined. Additionally, crystals of Cd0.55Mn0.45Te are relatively easier to grow than ZnTe. We report our preliminary results of optical limiting in Cd0.55Mn0.45Te:V at 0.780μm, 0.895μm, and 1.06μm, and we discuss the materials issues involved in improving and optimizing Cd1-xMnxTe for electro-optic power limiting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 479: Symposium S – Materials for Optical Limiting II , 1997 , 179
Copyright
Copyright © Materials Research Society 1997

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