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Bottom Contact Ambipolar Organic Thin Film Transistors Based on C60/Pentacene Heterostructure

Published online by Cambridge University Press:  26 February 2011

Kaname Kanai
Affiliation:
kaname@mat.chem.nagoya-u.ac.jp, Nagoya University, Chemistry, Furo-cho, Chikusa-ku, Nagoya, 464-8602, Japan, +81-52-789-3657, +81-52-789-2944
Suidong Wang
Affiliation:
dong@mat.chem.nagoya-u.ac.jp, Nagoya University, Nagoya, 464-8602, Japan
Kazuhiko Seki
Affiliation:
seki@mat.chem.nagoya-u.ac.jp, Nagoya University, Nagoya, 464-8602, Japan
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Abstract

We report the fabrication and characterization of the bottom contact organic thin film transistors and inverter based on a heterostructure of C60 on pentacene. The transistor shows ambipolar transport characteristics with high electron and hole mobilities of 0.23 cm2V−1s−1 and 0.14 cm2V−1s−1, respectively. After exposure to air, the n-channel in C60 is completely degraded whereas the p-channel in pentacene keeps working. Both the n-channel and the p-channel are stable in N2 atmosphere. The inverter exhibits typical transfer characteristics, which are interpreted by the distribution of the accumulated electrons and holes depending on the bias conditions. These results suggest a potential way to fabricate organic complementary circuits with a single organic heterostructure device.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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