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Bonding Structure of Ultrathin Oxides on Si(110) Surface

Published online by Cambridge University Press:  01 February 2011

Yoshihisa Yamamoto ,
Hideaki Togashi ,
Atsushi Kato ,
Maki Suemitsu ,
Yuzuru Narita ,
Yuden Teraoka  and
Akitaka Yoshigoe
Yoshihisa Yamamoto
Affiliation:
yamamoto@cir.tohoku.ac.jp, Tohoku University, Tohoku University, 6-3 Aza-Aoba, Aramaki, Aobaku, Sendai, 980-8578, Japan
Hideaki Togashi
Affiliation:
togashi@suemitsu.riec.tohoku.ac.jp, Tohoku University, 6-3 Aza-Aoba, Aramaki, Aoba-ku,, Sendai, 980-8578, Japan
Atsushi Kato
Affiliation:
kato@suemitsu.riec.tohoku.ac.jp, Tohoku University, 6-3 Aza-Aoba, Aramaki, Aoba-ku,, Sendai, 980-8578, Japan
Maki Suemitsu
Affiliation:
suemitsu@cir.tohoku.ac.jp, Tohoku University, 6-3 Aza-Aoba, Aramaki, Aoba-ku,, Sendai, 980-8578, Japan
Yuzuru Narita
Affiliation:
narita@ele.kyutech.ac.jp, Kyusyu Institute of Technology, 1-1, Sensui-mach, Tobata-ku, Kitakyushu, 804-8550, Japan
Yuden Teraoka
Affiliation:
yteraoka@spring8.or.jp, Japan Atomic Energy Agency, 1-1-1, Kouto, Sayo-cho, 679-5148, Japan
Akitaka Yoshigoe
Affiliation:
yoshigoe@spring8.or.jp, Japan Atomic Energy Agency, 1-1-1, Kouto, Sayo-cho, 679-5148, Japan
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Abstract

The thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shifted in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Sin+: n = 1 − 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si2+ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si3+ state is always more abundant than Si4+ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.

Keywords

Sioxidationphotoemission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I03-50
Copyright
Copyright © Materials Research Society 2008

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References

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