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Bonding and Release of Hydrogen in a-Si:C:H Alloys

Published online by Cambridge University Press:  28 February 2011

W. Beyer ,
H. Wagner  and
H. Mell
W. Beyer
Affiliation:
Institut fUr Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Julich, Federal Republic of Germany
H. Wagner
Affiliation:
Institut fUr Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Julich, Federal Republic of Germany
H. Mell
Affiliation:
Fachbereich Physik, Univ. Marburg, Renthof 5, D-3550 Marburg, Federal Republic of Germany
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Abstract

Hydrogen evolution and infrared absorption studies of a-Si:C:H films prepared from mixtures of hydrocarbon (CH4' C2H6' C2H4) and silane gases (SiH4 'Si2H6)by the glow-discharge process show that both the absolute hydrogen content and the hydrogen bonding is uniquely determined by the carbon content. Up to a carbon concentration of ∼45 % the widening of the optical gap is mainly due to an increase of the hydrogen content. For a hydrogen density NH > 1- 2x1022cm-3 the incorporated hydrogen atoms lead to the formation of voids, resulting in thermal instability of the bonded hydrogen and in a deterioration of the electronic quality of the amorphous material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 189
Copyright
Copyright © Materials Research Society 1985

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References

1. Hamakawa, Y., J. de Physique Colloq. 42, C 4–1131 (1981)Google Scholar
2. Tawada, Y., in: Japan Annual Reviews in Electronics, Computers and Telecommunications, Vol. 6, Hamakawa, Y., ed. (Omusha, Japan, 1983), p. 148 Google Scholar
3. Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H. and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).Google Scholar
4. Morimoto, A., Miura, T., Kumeda, M. and Shimizu, T., J. Appl. Phys. 53, 7299 (1982)Google Scholar
5. Anderson, D.A. and Spear, W.E., Philos. Mag. 35, 1 (1977)Google Scholar
6. Mahan, A.H., Roedern, B. v., Williamson, D.L. and Madan, A., J. Appl. Phys., to be publishedGoogle Scholar
7. Beyer, W. and Wagner, H., J. Non-Cryst. Solids 59–60, 161 (1983)Google Scholar
8. Nitta, S., Hatano, A., Yamada, M., Watanabe, M. and Kawai, M., J. Non-Cryst. Solids 59–60, 553 (1983)Google Scholar
9. Wieder, H., Cardona, M. and Guarnieri, C.R., Phys. Stat. Solidi (b) 92, 99 (1979)Google Scholar
10. Huber, K.P., in: AIP Handbook of Physics, Gray, D.E., ed. (McGraw-Hill, New York, 1972), p. 7–168 Google Scholar
11. Wagner, H. and Beyer, W., Solid State Commun. 48, 585 (1983)Google Scholar
12. Tauc, J., Grigorovici, R. and Vancu, A., Phys. Stat. Solidi 15, 627 (1966)Google Scholar