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Beta Silicon Carbide Growth with Device Applications

Published online by Cambridge University Press:  25 February 2011

G. L. Harris ,
M. G. Spencer ,
K. Jackson ,
A. Jones ,
K. Osborne ,
K. Fekade  and
K. Wongchotigul
G. L. Harris
Affiliation:
Howard University, Electrical Engineering Department, 2300 Sixth Street Northwest, Washington, D.C. 20059
M. G. Spencer
Affiliation:
Howard University, Electrical Engineering Department, 2300 Sixth Street Northwest, Washington, D.C. 20059
K. Jackson
Affiliation:
Howard University, Electrical Engineering Department, 2300 Sixth Street Northwest, Washington, D.C. 20059
A. Jones
Affiliation:
Howard University, Electrical Engineering Department, 2300 Sixth Street Northwest, Washington, D.C. 20059
K. Osborne
Affiliation:
Howard University, Electrical Engineering Department, 2300 Sixth Street Northwest, Washington, D.C. 20059
K. Fekade
Affiliation:
Howard University, Electrical Engineering Department, 2300 Sixth Street Northwest, Washington, D.C. 20059
K. Wongchotigul
Affiliation:
Howard University, Electrical Engineering Department, 2300 Sixth Street Northwest, Washington, D.C. 20059
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Abstract

Epitaxial thin films of cubic-SiC (100) have been grown at temperatures ranging from 1340–1400°C by using a reduced pressure chemical vapor deposition system. In this work, we will report on the doping of SiC using trimethylalumium (TMA), phosphine, and nitrogen. The electrical measurements on the SiC layers have been performed (Hall, CV, DLTS, etc.) and will be discussed in reference to SiC MESFETs and other SiC device structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 201
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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