Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-20T22:20:06.621Z Has data issue: false hasContentIssue false
  • English
  • Français

Behavior of W and WSix Contact Metallization on n- and p- Type GaN

Published online by Cambridge University Press:  15 February 2011

X. A. Cao ,
F. Ren ,
J. R. Lothian ,
S. J. Pearton ,
C. R. Abernathy ,
J. C. Zolper ,
M. W. Cole ,
A. Zeitouny ,
M. Eizenberg  and
R. J. Shul
X. A. Cao
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
J. R. Lothian
Affiliation:
Multiplex Inc., South Plainfield, NJ 07080, USA
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
J. C. Zolper
Affiliation:
Office of Naval Research, Arlington, VA 22217, USA
M. W. Cole
Affiliation:
US Army Research Laboratory, WMRD, Aberdeen Proving Ground, MD 21105, USA
A. Zeitouny
Affiliation:
Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
M. Eizenberg
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
Get access

Abstract

Sputter-deposited W-based contacts on p-GaN (NA∼1018cm-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.39
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., in GaN and Related Materials II, ed. Pearton, S. J. (Gordon and Breach, NY 1998).Google Scholar
2. Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994).Google Scholar
3. Schauler, M., Kirchner, C., Mayer, M., Pelzmann, A., Eberhard, F., Kamp, M., Unger, P. and Ebeling, K. J., MRS Internet J. Nitride Semicond. Res. 2, 44 (1997).Google Scholar
4. Ishikawa, H., Kobayashi, S., Koide, Y., Yamasaki, S., Nagai, S., Umezaki, J., Koike, M. and Murakami, M., J. Appl. Phys. 81, 1315 (1997).Google Scholar
5. Vassilevski, K. V., Rastegaeva, M. G., Babanin, A. I., Nikitina, I. P. and Dmitriev, V. A., MRS Internet J. Nitride Semicond. Res. 1, 38 (1996).Google Scholar
6. King, D. J., Zhang, L., Ramer, J. C., Hersee, S. D. and Lester, L. F., Mat. Res. Soc. Symp. Proc. 468, 421 (1997).Google Scholar
7. Lester, L. F., King, D. J., Zhang, L., Ramer, J. C., Hersee, S. D. and Zolper, J. C., Mat. Res. Soc. Symp. Proc. 97–1, 171 (1997).Google Scholar
8. Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T. and Koike, M., Jap. J. Appl. Phys. 34, L1517 (1995).Google Scholar
9. Smith, L. L., Davis, R. F., Kim, M. J., Carpenter, R. W. and Huang, Y., J. Mater. Res. 12, 2249 (1997).Google Scholar
10. Mori, T., Kozawa, T., Ohwaki, T., Taga, Y., Nagai, S., Yamasaki, S., Asami, S., Shibata, N. and Koike, M., Appl. Phys. Lett. 69, 3537 (1996).Google Scholar
11. Kim, T., Khim, J., Chae, S. and Kim, T., Mat. Res. Soc. Symp. Proc. 468, 427 (1997).Google Scholar
12. Trexler, J. T., Pearton, S. J., Holloway, P. H., Mier, H. G., Evans, K. R. and Karlicek, R. F., Mat. Res. Soc. Symp. Proc. 449, 1091 (1997).Google Scholar
13. Smith, L. L., Bremser, M. D., Carlson, E. P., Weeks, T. W. Jr, Huang, Y., Kim, M. J., Carpenter, R. W. and Davis, R. F., Mat. Res. Soc. Symp. Proc. 395, 861 (1996).Google Scholar
14. Trexler, J. T., Miller, S. J., Holloway, P. H. and Khan, M. A., Mat. Res. Soc. Symp. Proc. 395, 819 (1996).Google Scholar
15. Kim, T., Yoo, M. C. and Kim, T., Mat. Res. Soc. Symp. Proc. 449, 1061 (1997).Google Scholar
16. Mohney, S. E. and Lau, S. S., in GaN and Related Materials II, ed. Pearton, S. J. (Gordon and Breach, NY 1998).Google Scholar
17. Liu, Q. Z. and Lau, S. S., Solid -State Electron. 42, 667 (1998).Google Scholar
18. Cole, M. W., Ren, F. and Pearton, S. J., J. Electron. Soc. 144, L275 (1997); Appl. Phys. Lett. 71, 3004 (1997).Google Scholar
19. Cole, M. W., Eckart, D. W., Han, W. Y., Pfeffer, R. L., and Monahan, T., Ren, F., Yuan, C. and Stall, R. A., Pearton, S. J., Li, Y. and Lu, Y., J. App. Phys. 80, 278 (1996).Google Scholar
20. Zolper, J. C. and Shul, R. J., MRS Bulletin 22, 36 (1997).Google Scholar
21. Venugopalan, H. S., Mohney, S. E., Luther, B. P., DeLucca, J. M., Wolter, S. D., Redwing, J. M. and Bulman, G. E., Mat. Res. Soc. Symp. Proc. 468, 431 (1997).Google Scholar
22. Bermudez, V. M., Kaplan, R., Khan, M. A. and Kuznia, J. N., Phys. Rev. B 48, 2436 (1993).Google Scholar
23. Mohney, S. E., Luther, B. P. and Jackson, T. N., Mat. Res. Soc. Symp. Proc. 395, 843 (1996).Google Scholar