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Behavior of Dopant-Related Defects in AlGaAs Superlattices

Published online by Cambridge University Press:  25 February 2011

N.D. Theodore ,
P. Mei ,
S.A. Schwarz ,
C.B. Carter ,
C. Palmstrom ,
J.P. Harbison  and
L.T. Florez
N.D. Theodore
Affiliation:
Cornell University, Department of Materials Science and Engineering, Bard Hall, Ithaca, NY 14853
P. Mei
Affiliation:
Columbia University, Department of Electrical Engineering, 500 W. 120st St., New York, NY 10027
S.A. Schwarz
Affiliation:
Bell Communications Research Inc., 331 Newman Springs Rd., Redbank, NJ 07751.
C.B. Carter
Affiliation:
Cornell University, Department of Materials Science and Engineering, Bard Hall, Ithaca, NY 14853
C. Palmstrom
Affiliation:
Bell Communications Research Inc., 331 Newman Springs Rd., Redbank, NJ 07751.
J.P. Harbison
Affiliation:
Bell Communications Research Inc., 331 Newman Springs Rd., Redbank, NJ 07751.
L.T. Florez
Affiliation:
Bell Communications Research Inc., 331 Newman Springs Rd., Redbank, NJ 07751.
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Abstract

During the course of investigation of the mixing of highly silicon-doped GaAs/AlAs superlattices, defects such as dislocation loops and Si-rich precipitates were found to form in the specimens. These defects formed at particular doping levels upon annealing of the samples. The presence of the defects can be related to changes in mixing behavior. In the present study, transmission electron microscopy has been used to characterize the defects. Superlattices with varying silicon doping levels were annealed at different temperatures for varying time-periods, to observe the temperature-time behavior of the dislocation loops. The defects aggregate preferentially in the GaAs as opposed to the AlAs in the superlattice. A number of the dislocation-loops were investigated using high-resolution TEM. All the loops observed were interstitial in nature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 709
Copyright
Copyright © Materials Research Society 1990

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