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Beam Induced Reactions in Metal-Film Systems

Published online by Cambridge University Press:  15 February 2011

S. S. Lau
Affiliation:
Dept. of Electrical Engineering and Computer Science, UCSD, La Jolla, Ca., 92093
Martti Mäenpää
Affiliation:
Electrical Engineering Dept., Caltech, Pasadena, Ca. 91125
James W. Mayer
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell, Ithaca, N.Y., 14853
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Abstract

Pulsed beams (laser, electron, or ion) and ion beams (ion beam mixing) have been used to induce structural and compositional changes in metal-metal and metal-semiconductor thin-film structures. Metastable crystalline and amorphous phases have been formed. Although ultra fast quenching occurs with both techniques, metastable phases are formed by quenching from the liquid with pulsed beams and from the solid-phase with ion-induced reactions. With both techniques metastable phases can be formed over a broader compositional range than with conventional melt-quench methods.

Type
Research Article
Copyright
Copyright © Materials Research Society 1981

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References

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