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BaTiO3 Thin Films for Electro-optic and Non-linear Optical Applications

Published online by Cambridge University Press:  10 February 2011

B. A. Block  and
B. W. Wessels
B. A. Block
Affiliation:
Northwestern University, Department of Materials Science and Engineering and the Materials Research Center, Evanston, IL 60208
B. W. Wessels
Affiliation:
Northwestern University, Department of Materials Science and Engineering and the Materials Research Center, Evanston, IL 60208
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Abstract

Er-doped BaTiO3 thin films have been investigated as a candidate for an optically active waveguide medium. Epitaxial layers were prepared by metal-organic chemical vapor deposition at low pressure. The properties of the characteristic Er3+ luminescence transition at 0.8 eV have been investigated for epitaxial Er doped BaTiO3 thin films for various Er concentrations. The photoluminescent intensity was found to increase by a factor greater than 500 when the doping level was increased from 1 × 1020 cm−3 to 2.2 × 1021cm−3, indicating that concentration quenching was not significant at the highest doping levels. A complex emission spectra was observed and was attributed to the multi-site substitution of Er in BaTiO3. Transient decay measurements revealed a 7 ms radiative lifetime for the 0.80 eV transition that was independent of concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 175
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Lallier, E., Pocholle, J.P., Papuchon, M., Grezes-Besset, C., Pelletier, E., Micheli, M. De, Li, M.J. He, Q. and Ostrowsky, D.B., Electronics Lett. 25, 1491 (1989).Google Scholar
2. Brinkmann, R., Sohler, W. and Suche, H., Electronics Lett. 27, 415 (1991).Google Scholar
3. Block, B.A. and Wessels, B.W., Appl. Phys. Lett. 65, 25 (1994).Google Scholar
4. Block, B.A. and Wessels, B.W., Integrated Ferroelectrics 7, 25 (1995).Google Scholar
5. Fan, T.Y., Cordova-Plaza, A., Digonnet, M.J.F., Byer, R.L., and Shaw, H.J., J. Opt. Soc. Am. B 3, 140(1986).Google Scholar
6. Lallier, E., Pocholle, J.P., Papuchon, M., He, Q., Micheli, M. De, and Ostrowsky, D.B., Grezes-Besset, C., Pelletier, E., Electronics Lett. 27, 936 (1991).Google Scholar
7. Clem, P.G. and Payne, D.A., Mat. Res. Soc. Symp. Proc. 392, 201 (1995).Google Scholar
8. Eylem, C., Saghi-Szabo, G., Chen, B.H., Eichhorn, B., Peng, J.L., Greene, R., Salamanca-Riba, L., and Nahm, S., Chem. Mater. 4, 1038 (1992).Google Scholar
9. Wills, L.A., Feil, W.A., Wessels, B.W., Tonge, L.M. and Marks, T.J., J. Cryst. Growth 107, 712 (1991).Google Scholar
10. Rotenberg, B.A., Danilyuk, Y.L., Gindin, E.I., and Prokhvatilov, V.G., Soviet Physics — Solid State, 7, 2465 (1966).Google Scholar
11. Lewis, G.V. and Catlow, C.R.A., J. Phys. Chem. Solids, 47, 89 (1986).Google Scholar
12. Xue, L.A., Chen, Y. and Brooks, R.J., Materials Science and Engineering,B1, 193 (1988).Google Scholar
13. Makishima, S., Haseguwa, K. and Shionoya, S., J. Phys. Chem. Solids, 23, 749 (1962).Google Scholar
14. Rotman, S.R. and Hartmann, F.X., Chem. Phys. Lett. 152, 311 (1988).Google Scholar
15. Daran, E., Legros, R., Muñoz-Yagüe, A., Fontaine, C., and Bausá, L.E., J. Appl. Phys., 76, 270 (1994).Google Scholar
16. Inokuti, M. and Hirayama, F., J. of Chem. Phys. 43, 1978 (1965).Google Scholar