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Barrier Inhomogeneities at Schottky Contacts: Curved Richardson Plots, Idealities, and Flat Band Barriers

Published online by Cambridge University Press:  25 February 2011

Jürgen H. Werner ,
Herbert H. Güttler  and
Uwe Rau
Jürgen H. Werner
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraβe 1, 7000 Stuttgart 80, Germany
Herbert H. Güttler
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraβe 1, 7000 Stuttgart 80, Germany
Uwe Rau
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraβe 1, 7000 Stuttgart 80, Germany
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Abstract

Evaluating either curved Richardson plots or temperature-dependent ideality data allows for a quantitative characterization of spatial inhomogeneities at Schottky contacts. Applying the two independent methods to PtSi/Si diodes we obtain a standard deviation around 70mV for the barrier fluctuations. These results agree with those from the comparison of temperature-dependent current and capacitance barriers. We discuss also flat band barrier heights which should be used if one investigates the temperature dependence of fundamental Schottky barrier heights. Their temperature coefficients depend on metallization. For epitaxial NiSi2/Si contacts on (100) oriented Si we find a strong influence of interface crystallography on the temperature coefficients.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 311
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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