Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-16T13:08:45.210Z Has data issue: false hasContentIssue false
  • English
  • Français

Band-Edge Luminescence of MOCVD GaAs Grown Directly on Silicon

Published online by Cambridge University Press:  26 February 2011

M. G. Lamont ,
T. D. Harris ,
R. Sauer ,
R. M. Lum  and
J. K. Klingert
M. G. Lamont
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. D. Harris
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Sauer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. M. Lum
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
J. K. Klingert
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
Get access

Abstract

We report a detailed study using photoluminescence and photoluminescence excitation of MOCVD GaAs grown directly on Si substrates. Temperature variation and selective excitation allow reliable assignment of spectral features. This assignment permits measurements of strain and strain uniformity, identification of impurities, and assessment of general materials quality. In 2–5μm thick layers similar spectra are observed with little variation from substrate character. Most samples show one of the two split valence band features plus defect recombination, always including carbon. Strain uniformity varies widely and correlates with substrate thickness. The range of spectra observed from a variety of samples, and guidelines for interpretation of nonresonantly excited spectra will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 229
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Zemon, S., Shasty, S. K., Norris, P., Jagannath, C., and Lambert, G., Solid State Comm., 58, 457 (1986).Google Scholar
[2]Wilson, B. A., Bonner, C. E., Harris, T. D., Lamont, M. G., Miller, R. C., Sputz, S. K., Lum, R. M., Klingert, J. K., Vernon, S. M., and Haven, V. E., Mat. Res. Soc. Symp. Proceedings, 91, 255 (1987).Google Scholar
[3]Wilson, B. A., Bonner, C. E., Miller, R. C., Sputz, S. K., Harris, T. D., Lamont, M. G., Dupuis, R. D., Vernon, S. M., Haven, V. E., Lum, R. M., and Klingert, J. K., J. Electronic Materials, (Jan 1988) in press.Google Scholar
[4]Enatsu, M., Shimizu, M., Mizuki, T., Sugawara, K., and Sakurai, T.Jap. J. Appl. Phys. Lett., 26, L1468 (1987).Google Scholar
[5]Lum, R. M., Klingert, J. K., and Dutt, B. V., J. Cryst. Growth, 75, 421 (1986).Google Scholar
[6]Lum, R. M., Klingert, J. K., Davidson, B. A., and Lamont, M. G., Appl. Phys. Lett., 51, 36 (1987).Google Scholar