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Band Lineup of Van Der Waals-Epitaxy Interfaces

Published online by Cambridge University Press:  03 September 2012

R. Schlaf ,
T. Löher ,
O. Lang ,
A. Klein ,
C. Pettenkofer  and
W. Jaegermann
R. Schlaf
Affiliation:
Hahn-Meitner-Institut, Abt. Grenzflächen, Glienicker Str.100, 14109 Berlin, Germany
T. Löher
Affiliation:
Hahn-Meitner-Institut, Abt. Grenzflächen, Glienicker Str.100, 14109 Berlin, Germany
O. Lang
Affiliation:
Hahn-Meitner-Institut, Abt. Grenzflächen, Glienicker Str.100, 14109 Berlin, Germany
A. Klein
Affiliation:
Hahn-Meitner-Institut, Abt. Grenzflächen, Glienicker Str.100, 14109 Berlin, Germany
C. Pettenkofer
Affiliation:
Hahn-Meitner-Institut, Abt. Grenzflächen, Glienicker Str.100, 14109 Berlin, Germany
W. Jaegermann
Affiliation:
Hahn-Meitner-Institut, Abt. Grenzflächen, Glienicker Str.100, 14109 Berlin, Germany
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Abstract

Epitaxial lattice mismatched heterointerfaces between layered semiconductors and themselves and II-VI semiconductors (CdS, CdTe), respectively, have been prepared and their band lineup determined by photoemission. Different physical mechanisms, which govern the heterointerface formation, can be discriminated due to the specific properties of the van der Waals (vdW) surface. The interfaces between layered semiconductors mostly follow the electron affinity rule with a small but systematic deviation, which is assigned to the influence of interfacial quantum dipoles. However, the band lineup to the II-VI semiconductors shows a large interface dipole, which is related to a structural dipole from the polar, Cd terminated, face of the (111)- in case of Zinkblende CdTe- and the (0001)- in case of Wurtzite CdS- oriented overlayer film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 469
Copyright
Copyright © Materials Research Society 1997

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