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Band Gap Engineering and Electrical Field Tailoring for Voltage Controlled Spectral Sensitivity

Published online by Cambridge University Press:  01 February 2011

Manuela Vieira ,
P. Louro ,
A. Fantoni ,
M. Fernandes ,
G. Lavareda  and
C.N. Carvalho
Manuela Vieira
Affiliation:
mv@isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emidio Navarro, 1, Lisboa, N/A, 1979-014, Portugal
P. Louro
Affiliation:
plouro@deetc.isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emidio Navarro, 1, Lisbon, N/A, 1949-014, Portugal
A. Fantoni
Affiliation:
afantoni@deetc.isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emidio Navarro, 1, Lisbon, N/A, 1949-014, Portugal
M. Fernandes
Affiliation:
mfernandes@deetc.isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emidio Navarro, 1, Lisbon, N/A, 1949-014, Portugal
G. Lavareda
Affiliation:
pccanc@ist.utl.pt, FCT-UNL, Caparica, N/A, 2829-516, Portugal
C.N. Carvalho
Affiliation:
pccanc@ist.utl.pt, FCT-UNL, Caparica, N/A, 2829-516, Portugal
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Abstract

Stacked ITO/(a-SiC:H)pinpi /(a-Si:H)i'sn/ITO color sensitive detectors are analyzed using the laser scanned photodiode technique. Results show that band gap engineering together with the laser scanned photodiode technique allows a voltage controlled shift of the collection regions, allowing color discrimination at readout voltage that cancels the self-bias effect induced by the steady state illumination, across the back diode. The threshold voltage between green and red discrimination depends on the thickness ratio between a-Si:H (-i')/a-SiCH (-i) layers. As this ratio increases the self-reverse effect due to the front absorption will be balanced by the decrease of the self-forward effect due to the back absorption shifting the threshold voltage to lower reverse bias. The various design parameters and the optical readout process trade-offs are discussed and supported by a 2D numerical simulation. A self-bias model is proposed to explain the voltage controlled spectral sensitivity.

Keywords

sensoroptical propertiessimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A17-02
Copyright
Copyright © Materials Research Society 2006

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References

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