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Band alignment at CdS/wide-band-gap Cu(In,Ga)Se2 hetero-junction by using PES/IPES

Published online by Cambridge University Press:  01 February 2011

S.H. Kong ,
H. kashiwabara ,
K. Ohki ,
K. Itoh ,
T. Okuda ,
S. Niki ,
K. Sakurai ,
A. Yamadaa ,
S. Ishizuka  and
N. Terada
S.H. Kong
Affiliation:
Kagoshima University, Venture Business Laboratory, 1-21-40 Koorimoto, Kagoshima, 890-0065, Japan
H. kashiwabara
Affiliation:
Kagoshima University, Department of Nano Structure and Advanced Materials, 1-21-40 Koorimoto, Kagoshima, 890-0065, Japan
K. Ohki
Affiliation:
Kagoshima University, Department of Nano Structure and Advanced Materials, 1-21-40 Koorimoto, Kagoshima, 890-0065, Japan
K. Itoh
Affiliation:
Kagoshima University, Department of Nano Structure and Advanced Materials, 1-21-40 Koorimoto, Kagoshima, 890-0065, Japan
T. Okuda
Affiliation:
Kagoshima University, Department of Nano Structure and Advanced Materials, 1-21-40 Koorimoto, Kagoshima, 890-0065, Japan
S. Niki
Affiliation:
National Institute of Industrial Science and Technology, 1-1-1 Umezono Tsukuba, 305-8568, Japan
K. Sakurai
Affiliation:
National Institute of Industrial Science and Technology, 1-1-1 Umezono Tsukuba, 305-8568, Japan
S. Ishizuka
Affiliation:
National Institute of Industrial Science and Technology, 1-1-1 Umezono Tsukuba, 305-8568, Japan
N. Terada
Affiliation:
Kagoshima University, Department of Nano Structure and Advanced Materials, 1-21-40 Koorimoto, Kagoshima, 890-0065, Japan National Institute of Industrial Science and Technology, 1-1-1 Umezono Tsukuba, 305-8568, Japan
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Abstract

Direct characterization of band alignment at chemical bath deposition (CBD)-CdS/Cu0.93 (In1-xGax)Se2 has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 350 eV yields a removal of surface contamination as well as successful measurement of the intrinsic properties of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of 1.4 ∼ 1.6 eV were successfully exposed. IPES spectra revealed that the conduction band offset (CBO) at the interface region of the wide gap CIGS with x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that the energy spacing between conduction band minimum (CBM) of CdS layer and valence band maximum (VBM) of Cu0.93(In0.25Ga0.75)Se2 layer at interface region was no wider than that of the interface over the Cu0.93(In0.60Ga0.40)Se2 layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F5.16
Copyright
Copyright © Materials Research Society 2005

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