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B Diffusion in Low Energy B/BF2 Implants with Pre-Amorphization of Different Species

Published online by Cambridge University Press:  01 February 2011

Hong-Jyh Li ,
Todd Rhoad ,
Peter Zeitzoff ,
Robin Tichy ,
Larry Larson  and
Sanjay Banerjee
Hong-Jyh Li
Affiliation:
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Todd Rhoad
Affiliation:
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Peter Zeitzoff
Affiliation:
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Robin Tichy
Affiliation:
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Larry Larson
Affiliation:
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Sanjay Banerjee
Affiliation:
Microelectronics Research Center, 10100 Burnet Road, MER 1.108, R9900, University of Texas at Austin, TX 78712
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Abstract

The formation of an amorphous layer is needed to prevent channeling effect of B in the subsequent implant and hence, shallower as-implanted and annealed profiles could be expected. B diffusion in the pre-amorphization (PAI) Si has been studied extensively by many research groups and the diffusion has been explained by the interaction of B and defects generated by the PAI and B implant processes. In our previous study, we found that B diffusion can also be affected by the immobile B clustering caused by the incorporated species and therefore, B diffusion in the PAI Si should be expected to be different with different PAI species due to their different effect on the B clustering. In this paper, we reported different B diffusion behavior in bulk Si with respective to different PAI species. The species include GeF2, Ge, F, BF2, and In and the immobile B clustering plays an important role in the B diffusion reduction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D5.4
Copyright
Copyright © Materials Research Society 2003

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References

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