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Auger and EELS Study of a-Si1−x Cx:H Alloys

Published online by Cambridge University Press:  21 February 2011

M.De Seta ,
P. Narducci  and
F. Evangelisti
M.De Seta
Affiliation:
Dipartimento di Fisica, Universita “La Sapienza”, Piazzale Aldo Moro 2, 1–00185, Roma, Italy
P. Narducci
Affiliation:
Dipartimento di Fisica, Universita “La Sapienza”, Piazzale Aldo Moro 2, 1–00185, Roma, Italy
F. Evangelisti
Affiliation:
Dipartimento di Fisica, Universita “La Sapienza”, Piazzale Aldo Moro 2, 1–00185, Roma, Italy
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Abstract

It is shown that Auger and electron energy loss spectroscopies can provide a well defined picture of the local bonding and structure of a-Si1−x Cx:H alloys. The samples were found macroscopically homogeneous but microscopically heterogeneous on a scale of few Angstroms. A simple model where the tetrahedral network is chemically ordered at low x values and carbon tends to segregate in C-C microclusters at high x values seems to reproduce the data very well. By fitting the C and Si Auger spectra it was possible to have a quantitative determination of the percentage of different configurations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 265
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Lee, W.Y., J. Appl. Phys. 51, 3365 (1980).Google Scholar
2. Fang, R.C. and Ley, L., Phys. Rev. B 40, 3818 (1989).Google Scholar
3. Katayama, Y., Shimada, T. and Usami, K., Phys. Rev. Lett. 46, 1146 (1981).Google Scholar
4. McKenzie, D.R., Smith, G.B. and Liu, Z.Q., Phys. Rev. B 37 8875 (1988).CrossRefGoogle Scholar
5. Haas, T.W., Grant, J.T. and Dooley, G.J. III, J. Appl. Phys. 43, 1853 (1972).CrossRefGoogle Scholar
6. Bermudez, V.M. and Kaplan, R., J. Mater. Res. 5, 2882 (1990).CrossRefGoogle Scholar
7. Ramaker, D.E., Appl. Surf. Sci. 21, 243 (1985).Google Scholar
8. Filipponi, A., Fiorini, P., Evangelisti, F., Balerna, A. and Mobilio, S., J. Phys. (Paris) C–47, 357 (1986);Google Scholar
Pascarelli, S., Boscherini, F., Mobilio, S. and Evangelisti, F. these proceedings.Google Scholar
9. Mui, K. and Smith, F.W., Phys. Rev. B 35, 8080 (1987);Google Scholar
Mui, K., Basa, D.K., Smith, F.W. and Corderman, R., Phys. Rev. B 35, 8089 (1987).Google Scholar
10. Cini, M., Solid State Commun. 20, 605 (1976);Google Scholar
Sawatzky, G.A., Phys. Rev. Lett. 39, 504 (1977).CrossRefGoogle Scholar
11. Pines, D., Elementary Excitations in Solids. Benjamin Inc., N.Y. 1963.Google Scholar