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Au Ohmic Contacts to P-Type Hg1-xCdxte Utilizing Thin Interfacial Layers

Published online by Cambridge University Press:  25 February 2011

V. Krishnamurthy ,
A. Simmons  and
C. R. Helms
V. Krishnamurthy
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, California 94305
A. Simmons
Affiliation:
Texas Instruments Inc., Dallas. Texas 75265
C. R. Helms
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, California 94305
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Abstract

Ohmic behavior is observed in electroless Au contacts to p -type Hg1−xCdxTe. Our investigation of the interfacial chemistry of such contacts suggest that this ohmic behavior may be due to the presence of a Te,O, and CI layer. To verify this correlation with interfacial chemistry, thin plasma oxide layers were used in evaporated Au contacts. The annealed plasma oxidized contacts exhibited low contact resistances. This behavior was attributed to a low interface state density at the interfacial layer/Hg1−xCdxTe interface. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 449
Copyright
Copyright © Materials Research Society 1990

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References

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