Article contents
Atomistic Modeling of the Ion Implantation Step Within a 2D Process Simulator
Published online by Cambridge University Press: 10 February 2011
Abstract
2D calculations of as-implanted dopant profiles are performed using a new module of the process simulator DIOS which is based on the binary collision code Crystal-TRIM. Examples derived from MOS and trench technology are considered. Good lateral and depth resolution is achieved within an acceptable computing time by combining a trajectory splitting algorithm with a method for the lateral duplication of ion trajectories.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1998
References
REFERENCES
- 2
- Cited by