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Atomistic Mechanisms Underlying Chemical Mechanical Planarization of Copper

Published online by Cambridge University Press:  01 February 2011

Y.Y. Ye ,
R. Biswas ,
A. Bastawros  and
A. Chandra
Y.Y. Ye
Affiliation:
Department of Physics and Astronomy, Microelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011 Center of Analysis and Testing, Wuhan University, Wuhan, People's Republic of China
R. Biswas
Affiliation:
Department of Physics and Astronomy, Microelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011
A. Bastawros
Affiliation:
Dept. of Aerospace Engineering and Engineering Mechanics, Iowa State University, Ames, IA 50011.
A. Chandra
Affiliation:
Dept. of Mechanical Engineering, Iowa State University, Ames, IA 50011.
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Abstract

With an aim to understanding the fundamental mechanisms underlying chemical mechanical planarization (CMP) of copper, we simulate the nanoscale polishing of a copper surface with molecular dynamics utilizing the embedded atom method. Mechanical abrasion produces rough planarized surfaces with a large chip in front of the abrasive particle, and dislocations in the bulk of the crystal. The addition of chemical dissolution leads to very smooth planarized copper surfaces and considerably smaller frictional forces that prevent the formation of bulk dislocations. This is a first step towards understanding the interplay between mechanistic material abrasion and chemical dissolution in chemical mechanical planarization of copper interconnects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F1.8
Copyright
Copyright © Materials Research Society 2003

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