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Atomic-Scale Imaging of Dopant Atom Distributions Within Silicon δ-Doped Layers

Published online by Cambridge University Press:  10 February 2011

R. Vanfleet ,
D.A. Muller ,
H.J. Gossmann ,
P.H. Citrin  and
J. Silcox
R. Vanfleet
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY
D.A. Muller
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ
H.J. Gossmann
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ
P.H. Citrin
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ
J. Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY
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Abstract

We report measurements of the distribution of Sb atoms in σ-doped Si, over a wide 2-D concentration range. Both annular dark-field imaging and electron energy loss spectroscopy proved sufficiently sensitive to locate Sb atoms at the atomic scale. Improvements in both detector sensitivities and specimen preparation were necessary to achieve these results, which offer a surprising explanation for the dramatic difference in electrical activity between 2-D and 3-D dopant distributions at the same effective volume concentrations. The prospects for the general identification of individual dopant atoms will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 589 , 1999 , 173
Copyright
Copyright © Materials Research Society 2001

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Footnotes

1

Current affiliation: Advanced Materials Processing and Analysis Center (AMPAC) and Department of Physics, University of Central Florida, Orlando, FL

References

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