Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-17T14:09:51.830Z Has data issue: false hasContentIssue false
  • English
  • Français

The Atomic Structure of the Si/CoSi2 Interface

Published online by Cambridge University Press:  21 February 2011

J.H. Mazur  and
P. Grodzinski
J.H. Mazur
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241.
P. Grodzinski
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241.
Get access

Abstract

High resolution electron microscopy lattice images were calculated for six atomic arrangements at the CoSi2 – (111)Si interface i.e. type A and type B, each type with Co atoms at the interface 8-, 7- and 5- fold coordinated. The results suggest that the new 8-fold coordinated variant should be easily distinguishable from the 5-fold coordinated variant, while 8- and 5-fold coordinated variants should be discernable from the 7-fold coordinated variant by the observation of a relative rigid body translation of Si and CoSi2 lattices. Unit cell size variation was found not to affect the contrast in the computed images of the interface provided that (i) the unit cells were chosen correctly i.e. to assure continuity of the periodic extension and (ii) the sampling point density was sufficient to prevent aliasing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 387
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hamann, D.R., Phys. Rev. Let. 60, 313 (1988)Google Scholar
2. Bulle-Lieuwma, C.W., Ommen, A.H. Van, and Hornstra, J. in Epitaxy of Semiconductor Layered Structures, edited by Tung, R.T., Dawson, L.R., Gunshor, R.L. (Mater. Res. Soc. Proc. 102, Pittsburgh, PA 1988), pp.377–382.Google Scholar
3. Henz, J., Ospelt, M., and Kanel, H. von, Solid State Communications, 63, 445 (1987).CrossRefGoogle Scholar
4. d'Anterroches, C. and d'Avitaya, F.A., Thin Solid Films 137, 351 (1986).Google Scholar
5. Gibson, J.M., Bean, J.C., Poate, J.M., and Tung, R.T., Appl. Phys. Lett. 41, 818 (1982).Google Scholar
6. Cherns, D., Anstis, G.R., Hutchison, J.L., and Spence, J.C.H., Phil. Mag. A 46, 849 (1982).CrossRefGoogle Scholar
8. Glaisher, R.W. and Spargo, A.E.C., Ultramicroscopy 18, 323 (1985).CrossRefGoogle Scholar
9. Williams, J.O. and Wright, A.C., Phil. Mag. A 55, 99 (1987).Google Scholar
10. to be published.Google Scholar