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The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers

Published online by Cambridge University Press:  10 February 2011

V. Potin ,
G. Nouet ,
P. Ruterana  and
R.C. Pond
V. Potin
Affiliation:
Groupe d'Etudes des Semiconducteurs, Université de Montpellier II, Place Eugene Bataillon, 34095 Montpellier cedex 5, France
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Materiaux, UPRESA 6004 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 boulevard Maréchal Juin, 14050 Caen Cedex, France. ruterana@lermat8.ismra.fr
P. Ruterana
Affiliation:
Groupe d'Etudes des Semiconducteurs, Université de Montpellier II, Place Eugene Bataillon, 34095 Montpellier cedex 5, France
R.C. Pond
Affiliation:
Department of Materials Science and Engineering, the University of Liverpool, Liverpool L69 3 GH, England.
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Abstract

The studied GaN layers are made of mosaYc grains rotated around the c-axis by angles in the range 0-25°. Using high-resolution electron microscopy, anisotropic elasticity calculations and image simulation, we have analyzed the atomic structure of the edge threading dislocations. Here, we present an analysis of the Σ = 7 boundary using circuit mapping in order to define the Burgers vectors of the primary and secondary dislocations. The atomic structure of the primary ones was found to exhibit 5/7 and 8 atom cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 589 , 1999 , 191
Copyright
Copyright © Materials Research Society 2001

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