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Atomic structure of metal-free and catalyzed Si nanowires

Published online by Cambridge University Press:  25 May 2011

Giuseppe Nicotra ,
Corrado Bongiorno ,
Annalisa Convertino ,
Massimo Cuscunà ,
Faustino Martelli  and
Corrado Spinella
Giuseppe Nicotra
Affiliation:
CNR-IMM of Catania Stradale Primosole 50 I-95121 Catania, Italy.
Corrado Bongiorno
Affiliation:
CNR-IMM of Catania Stradale Primosole 50 I-95121 Catania, Italy.
Annalisa Convertino
Affiliation:
CNR-IMM of Rome via del Fosso del Cavaliere 100, 00133 Rome, Italy.
Massimo Cuscunà
Affiliation:
CNR-IMM of Rome via del Fosso del Cavaliere 100, 00133 Rome, Italy.
Faustino Martelli
Affiliation:
CNR-IMM of Rome via del Fosso del Cavaliere 100, 00133 Rome, Italy.
Corrado Spinella
Affiliation:
CNR-IMM of Catania Stradale Primosole 50 I-95121 Catania, Italy.
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Abstract

Metal-free and Au-catalyzed silicon nanowires (Si-NWs) grown at low temperatures have been analyzed through transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and their crystalline phase studied. All the observed nanowires are crystalline, grow along two different directions, <110> or <112>, and contain high density of planar defects, such as stacking faults (SFs) and twins. The defect size is comparable to the wire diameter for the metal-free process whilst it is much larger than the wire diameter for the Aucatalyzed Si-NWs. In this latter case parallel SFs may re-arrange and transform in a metastable rhombohedral 9R polytype structure whose formation mechanism is discussed.

Keywords

transmission electron microscopy (TEM)nanostructurecrystallographic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa02-04
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Wagner, R. S. and Ellis, W. C. Appl. Phys. Lett. 4, 89 (1964).Google Scholar
2. Cuscunà, M., Convertino, A., Mariucci, L., Fortunato, G., Felisari, L., Nicotra, G., Spinella, C., Pecora, A., and Martelli, F., Nanotechnology 21, 255601 (2010).Google Scholar
3. Liu, X. and Wang, D. Nano Res 2, 575 (2009)Google Scholar
4. Cayron, C., Hertog, M. D., Latu-Romain, L., Mouchet, C., Secouard, C., Rouviere, J., Rouvierea, E. and Simonato, J., J. Appl. Cryst., 42, 242 (2009)Google Scholar
5. Fontcuberta i Morral, A., Arbiol, J., Prades, J.D., Cirera, A., Morante, J.R., Adv. Mater. 19, 1347–1351 (2007)Google Scholar
6. Davidson, F. M., Lee, D. C., Fanfair, D. D., and Korgel, B. A. J. Phys. Chem. C, 111, 2929 (2007)Google Scholar
7. Lopez, F. J., Hemesath, E. R., and Lauhon, L. J., Nano Lett., 9, No. 7, (2009)Google Scholar