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Atomic Structure Of Grain Boundaries And Interfaces In Iiinitrides Epitaxial Systems

Published online by Cambridge University Press:  10 February 2011

S. Ruvimov ,
Z. Liliental-Weber ,
J. Washburn ,
H. Amano ,
I. Akasaki  and
M. Koike
S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
H. Amano
Affiliation:
Meijo University, Tempakuku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Meijo University, Tempakuku-ku, Nagoya 468, Japan
M. Koike
Affiliation:
Toyoda Gosei Co LTD, New Market Technical Division, Haruhi-cho Nishikasugai-gun, Aichi 452, Japan
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Abstract

High resolution electron microscopy (HREM) was applied to study atomic structure of stacking faults, grain boundaries and interfaces in III-nitrides epitaxial layers grown by MOVPE on sapphire. Defects formed in GaN epitaxial layers grown by MOVPE were reviewed in comparison with those in MBE grown materials

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 387
Copyright
Copyright © Materials Research Society 1998

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