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Atomic Oxidation of Ultra Thin SiGe Using Afterglow Oxygen Plasma

Published online by Cambridge University Press:  25 February 2011

P. C. Chen ,
J. Y. Lin ,
Y. J. Hsut  and
H. L. Hwang
P. C. Chen
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin-chu, Taiwan, R.O.C.
J. Y. Lin
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology, Ta—shi, Tao—yuan, Taiwan, R.O.C.
Y. J. Hsut
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin-chu, Taiwan, R.O.C.
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Abstract

Microwave remote plasma oxidation system was used to study the oxidation of SiGe samples at low temperatures. The extent of Ge segregation at oxide/SiGe interface was investigated by using SIMS depth profiles. By comparing the segregation factors, the Ge segregation in the samples oxidized by atomic oxygen at 500 °C was much less than that in the samples oxidized without plasma at 950 °C. The Ge segregation has been largely suppressed by atomic oxygen oxidation at lower temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 485
Copyright
Copyright © Materials Research Society 1993

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References

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