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Atomic Layer Controlled Deposition of Al2O3 Films Employing Trimethylaluminum (TMA) and H2O Vapor

Published online by Cambridge University Press:  15 February 2011

A. C. Dillon ,
A. W. Ott ,
S. M. George  and
J. D. Way
A. C. Dillon
Affiliation:
Dept. of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309
A. W. Ott
Affiliation:
Dept. of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309
S. M. George
Affiliation:
Dept. of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309
J. D. Way
Affiliation:
Dept. of Chemical Engineering and Petroleum Refining, Colorado School of Mines, Golden, CO 80401
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Abstract

Sequential surface chemical reactions for the controlled deposition of Al2O3 films were studied using transmission Fourier transform infrared spectroscopy (FTIR). Experiments were performed in situ in an ultrahigh vacuum UHV chamber using high surface area alumina membranes. Trimethylaluminum [Al(CH3)3] (TMA) and H2O vapor were employed sequentially in an ABAB... binary fashion to achieve atomic layer controlled growth. An optimal Al2O3 growth procedure was established that employed TMA/H2O exposures at .3 Torr and 500 K. The experiments revealed that each reaction was self-terminating and atomic layer controlled growth was dictated by the surface chemistry. The controlled deposition of Al2O3 may be employed on silicon surfaces for the formation of high dielectric gate and passivation layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 335
Copyright
Copyright © Materials Research Society 1994

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