Hostname: page-component-7479d7b7d-68ccn Total loading time: 0 Render date: 2024-07-11T20:27:14.687Z Has data issue: false hasContentIssue false
  • English
  • Français

The Atomic Geometry of the Reconstructed (001) Surface of the Rutile Phase of SnO2

Published online by Cambridge University Press:  25 February 2011

Charles B. Duke  and
Michael R. Thompson
Charles B. Duke
Affiliation:
Molecular Science Research Center Battelle Pacific Northwest Laboratory Box 999 Richland, Washington
Michael R. Thompson
Affiliation:
Molecular Science Research Center Battelle Pacific Northwest Laboratory Box 999 Richland, Washington
Get access

Abstract

The tight-binding total energy formalism developed for tetrahedrally coordinated compound semiconductors has been extended to rutile-structure oxides and applied to calculate the surface atomic geometry and electronic structure of SnO2 (001). Two stable structures, separated by an energy barrier, are found. The first consists of slightly relaxed surface geometry with the top layer oxygen atoms relaxed outward by approximately 0.12A, and cations inward by 0.25A. The second geometry is a more massively reconstructed surface in which the four-coordinate surface Sn atoms attain highly distorted tetrahedral coordination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 235
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Duke, C.B., in Surface Properties of Electronic Materials, King, D.A. and Woodruff, D.P., Eds. (Elsevier, Amsterdam, 1988), pp. 69–118; C.B. Duke and Y.R. Wang, J. Vac. Sci. C.B. Duke and Y.R. Wang, ibid, 6, 1440 (1988).Google Scholar
2. Burdett, Jerremy, Inorg. Chem., 24, p. 2244–2253 (1985); Michael O'Keeffe, Acta Crystallogr., Sect. A., A33, 924 (1977).Google Scholar
3. Chadi, D.J., Phy. Rev B, 9, 2074 (1979); C. Mailhiot, C.B. Duke, and D.J. Chadi, Surf. Sci., 149, 366 (1985); S. Munnix and M. Schmeits, Surf. Sci., 126, 20 (1983); W.A. Harrison, Phys Rev., B8, 4487 (1973); W.A. Harrison in, Electronic structure and Properties of Solids (Freeman, San Francisco), 1980; P. Vogl, H.P. Hjalmmarson, and John D. Dow, J. Phys. Chem. Solids, 44, 365 (1983).Google Scholar