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Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

Published online by Cambridge University Press:  15 February 2011

P. Brogueira ,
V. Chu  and
J.P. Conde
P. Brogueira
Affiliation:
Dept. of Physics, Instituto Superior Técnico, Lisbon, Portugal
V. Chu
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, Lisbon, Portugal.
J.P. Conde
Affiliation:
Dept. of Materials Engineering, Instituto Superior Técnico, Lisbon, Portugal
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Abstract

The initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 519
Copyright
Copyright © Materials Research Society 1999

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