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Atomic Diffusion With Strain and Injection

Published online by Cambridge University Press:  16 February 2011

J. A. Van Vechten
J. A. Van Vechten*
Affiliation:
Center for Advanced Materials Research, Department of Electrical and Computer Engineering, Oregon State University, Corvallis, OR 97331-3211 U.S.A.
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Abstract

The inherent complexity of defect processes in III-V's and the consequent difficulties with ab initio and semi-empirical methods are recalled. A potential solution using massive Monte Carlo simulation on microcomputers is suggested. Evidence for the validity of the Ballistic Model, BM, of atomic diffusion in III-V's is noted. According to the BM the effect of strain (in the absence of any electrostatic, population, or recombination effect) is to increase the rate at which a given mobile atom hops where the sample is compressed. For the case of misfit strain at a (100) junction, we note that the anisotropy of the elastic constants implies that some planes running into the bulk will be compressed whichever the sign of the misfit. This implies that misfit strain of either sign should increase the observed rate of interdiffusion, in the absence of other effects. We also recall the importance (demonstrated at low T) of recombination enhancement of atomic diffusion, RED. Devices are processed at temperatures where the thermal rate of recombination is very high and often operated at high levels of injection. The interaction of strain with RED is clearly important and complicated. III-V crystals have the further complication of being piezoelectric. The active piezoelectric axes are <111>, so a pure <100> strain does not produce a field. However, the accommodation a device makes to misfit at (100) junctions can generate a strong field, which may fluctuate with bias voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 165
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Vechten, J.A. Van in Handbook on Semiconductors Vol.3, edited by Keller, S.P. (North-Holland, Amsterdam, 1980) chapt. 1.Google Scholar
2. Jordan, A.S., Neida, A.R. von, Caruso, R., and Kim, C.K., J. Electrochem. Soc. 121, 153 (1974).10.1149/1.2396812Google Scholar
3. Yuanxi, Zou, Mater. Lett. 5, 203 (1987).10.1016/0167-577X(87)90011-5Google Scholar
4. Wager, J.F. and Vechten, J.A. Van, Phys. Rev. B 35, 2330 (1987).10.1103/PhysRevB.35.2330Google Scholar
5. Dannefaer, S., Mascher, P., and Kerr, D., J. Phys. Conds. Matter 1, 3213 (1989).10.1088/0953-8984/1/20/004Google Scholar
6. Van Vechten, J.A., J. Phys. C: Solid State 17, L 933 (1984).10.1088/0022-3719/17/35/001Google Scholar
7. Van Vechten, J. A., Mat. Res. Soc. Symp. Proc. 46, 83 (1985).10.1557/PROC-46-83Google Scholar
8. Cf., e.g., the recent “Interational Symposium on Control of Defects in Semiconductors, IC-STDCS” celebrating the 100th anniversary of the founding of the port of Yokohama, Yokohama, Sept. 1989. Proceedings edited by Sumino, K. (North Holland, Amsterdam, 1990).Google Scholar
9. Kohn, W. and Sham, L. J., Phys. Rev. 140 A1133 (1965).10.1103/PhysRev.140.A1133Google Scholar
10. Baraff, G.A. and Schluetter, M., Phys. Rev. B 30, 3460 (1984).10.1103/PhysRevB.30.3460Google Scholar
11. Shen, Y-T., Bylander, D.M., and Kleinman, L., Phys. Rev. B 36 3465 (1987).10.1103/PhysRevB.36.3465Google Scholar
12. Hanke, W. and Sham, L.J., Phys. Rev. B 21, 4656 (1980).10.1103/PhysRevB.21.4656Google Scholar
13. Hanke, W., Strinati, G., and Mattausch, H.J. in Recent Developments in Condensed Matter Physics, edited by Devreese, J.T. (Plenum, New York, 1981) Vol.1.Google Scholar
14. Puska, M.J., J. Phys.: Condens. Matter 1, 7347 (1989).Google Scholar
15. Puska, M.J., Jepsen, O., Gunnarson, O., and Nieminen, R.M., Phys. Rev. B 34, 2695 (1986).10.1103/PhysRevB.34.2695Google Scholar
16. Dannefaer, S. and Kerr, O., J. Appl. Phys. 60, 1313 (1986).10.1063/1.337303Google Scholar
17. Chadi, D.J. and Chang, K.J., Phys. Rev. Lett. 60, 2187 (1988).10.1103/PhysRevLett.60.2187Google Scholar
18. Chadi, D.J. and Chang, K.J., Phys. Rev. Lett. 61, 873 (1988).10.1103/PhysRevLett.61.873Google Scholar
19. Van Vechten, J.A., Solid-State Electron. 33, S 39 (1990).Google Scholar
20. Lagowski, J., Gatos, H.C., Kang, C.H., Skowronski, M., Ko, K.Y., and Lin, D.C., Appl. Phys. Lett. 49, 892 (1986).10.1063/1.97527Google Scholar
21. Culbertson, J.C., Strom, U., and Wolf, S.A., Phys. Rev. 36, 2962 (1987).10.1103/PhysRevB.36.2962Google Scholar
22. Narayanamuri, V., Logan, R.A., and Chin, M.A., Phys. Rev. Lett. 43, 1536 (1979).10.1103/PhysRevLett.43.1536Google Scholar
23. Khachaturyan, K.A., Awschalom, D.D., Rozen, J.R., and.Weber, E.R., Phys. Rev. Lett. 63, 1311 (1989).10.1103/PhysRevLett.63.1311Google Scholar
24. Lang, D.V., Petroff, P.M., Logan, R.A., and Johnston, W.D., Phys. Rev. Lett. 42, 1353 (1979).10.1103/PhysRevLett.42.1353Google Scholar
25. Van Vechten, J.A., J. Phys.: Condens. Matter 1, 5171 (1989).Google Scholar
26. Bonde-Nielsen, K., Grunn, H., Haas, H., Pedersen, F.T., and Weyer, G., J. Electron. Matter. 14a, 1065 (1985).Google Scholar
27. Huntley, F.A. and Willoughby, A.F.W., J. Electrochem. Soc. 120, 414 (1973).10.1149/1.2403468Google Scholar
28. Frank, F.C. and Turnbull, D., Phys. Rev. 104, 617 (1956).10.1103/PhysRev.104.617Google Scholar
29. Coffa, S., Calcagno, L., Compisano, S.U., Calleri, G., and Ferla, G., J. Appl. Phys. 64, 6291 (1988) and therein.10.1063/1.342087Google Scholar
30. Seeger, A., Phys. Stat. Solidi (a) 61, 521 (1980).10.1002/pssa.2210610225Google Scholar
31. Gosele, U., Frank, W., and Seeger, A., Appl. Phys. A 23, 361 (1980).10.1007/BF00903217Google Scholar
32. Vechten, J.A. Van, Schmid, U., and Myers, N.C. in IC-STDCS, op. cit. (Ref. 8).Google Scholar
33. Schmid, U., Vechten, J.A. Van, Myers, N.C., and Koch, U., Proceedings of the MRS Fall Symposium 1989.Google Scholar
34. Schmid, U., Myers, N.C., and Vechten, J.A. Van, Comp. Phys. Commun. 58, 329 (1990). This program is available either from its authors at the cost of the media or from Computer Physics Communications Library, The Queen's University of Belfast, Belfast BT7 INN, Northern Ireland on the BITNET network at CPC@AMVI.QUB.AC.UK.10.1016/0010-4655(90)90067-BGoogle Scholar
35. Vechten, J.A. Van, Phys. Rev. B 12, 1247 (1975).10.1103/PhysRevB.12.1247Google Scholar
36. Wager, J.F. and Vechten, J.A. Van, Phys. Rev. B 32, 5251 (1985).10.1103/PhysRevB.32.5251Google Scholar
37. Vechten, J.A. Van and Wager, J.F., Phys. Rev. B 32, 5259 (1985).10.1103/PhysRevB.32.5259Google Scholar
38. Van Vechten, J.A. and Wager, J.F., J. Appl. Phys. 57, 1956 (1985).10.1063/1.334431Google Scholar
39. Juang, M.T., Wager, J.F., and Vechten, J.A. Van, J. Electrochem. Soc. 135, 2019 (1988).10.1149/1.2096199Google Scholar
40. Dobson, T.W., Wager, J.F., and Van Vechten, J.A., Phys. Rev. B 40, 2962 (1989).10.1103/PhysRevB.40.2962Google Scholar
41. Flynn, C.P., Point Defects and Diffusion (Clarendon, Oxford, 1972) and therein.Google Scholar
42. Van Vechten, J.A. and Schmid, U., J. Vac. Sci. Technol. B 7, 827 (1989).10.1116/1.584609Google Scholar
43. Mei, P., Schwarz, S.A., Venkatesan, T., Schwartz, C.L., Harbison, J.P., Florez, L., Theodore, N.D., and Carter, C.B., Appl. Phys. Lett. 53, 2650 (1988).10.1063/1.100183Google Scholar
44. Keyes, R.W., J. Chem. Phys. 29, 467 (1958).10.1063/1.1744525Google Scholar
45. Barnes, C.E. and Samara, G.A., MRS Symp. Proc. 46, 471 (1985).10.1557/PROC-46-471Google Scholar
46. Samara, G.A., Phys. Rev. B 37, 8523 (1988).10.1103/PhysRevB.37.8523Google Scholar
47. Emrick, R.M., Phys. Rev. 122, 1720 (1961).10.1103/PhysRev.122.1720Google Scholar
48. Emrick, R.M., Phys. Rev. B 22, 3563 (1980).10.1103/PhysRevB.22.3563Google Scholar
49. Nygren, E., Aziz, M.J., Turnbull, D., Poate, J.M., Jacobsen, D.C., and Hull, R., Appl. Phys. Lett. 47, 232 (1985).10.1063/1.96228Google Scholar
50. Lu, G.Q., Nygren, E., Aziz, M.J., Turnbull, D., and White, C.W., Appl. Phys. Lett. 54, 2583 (1989).10.1063/1.101056Google Scholar
51. Werner, M., Mehrer, H., and Hochheimer, D., Phys. Rev. B 32, 3930 (1985).10.1103/PhysRevB.32.3930Google Scholar
52. Lu, G.Q., Nygren, E., Aziz, M.J., Turnbull, D., and White, C.W., Appl. Phys. Lett. 56, 137 (1990).10.1063/1.103053Google Scholar
53. Vechten, J.A. Van, Phys. Rev. B 38, 9913 (1988).10.1103/PhysRevB.38.9913Google Scholar