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Atomic and Electronic Structure Analysis of Σ=3, 9 and 27 Boundary, and Multiple Junction in β-SiC

Published online by Cambridge University Press:  10 February 2011

K. Tanaka  and
M. Kohyama
K. Tanaka
Affiliation:
Department of Material Physics, Osaka National Research Institute, AIST, 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577, Japan, koji@onri.go.jp
M. Kohyama
Affiliation:
Department of Material Physics, Osaka National Research Institute, AIST, 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577, Japan, koji@onri.go.jp
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Abstract

The atomic structures of σ=3, 9 and 27 boundaries, and multiple junctions in β-SiC were studied by high-resolution electron microscopy (HREM). Especially, the existence of the variety of structures of σ=3 incoherent twin boundaries and σ=27 boundary was shown by HREM. The structures of σ=3, 9 and 27 boundary were explained by structural unit models. Electron energy-loss spectroscopy (EELS) was used to investigate the electronic structure of grain boundaries. The spectra recorded from bulk, {111}σ=3 coherent twin boundary (CTB) and {1211}σ=3 incoherent twin boundary (ITB) did not show significant differences. Especially, the energy-loss corresponding to carbon 1s-to Φ* transition was not found. It indicates that C atoms exist at grain boundary on the similar condition of bulk

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 589 , 1999 , 341
Copyright
Copyright © Materials Research Society 2001

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